SiHB30N60E
www.vishay.com
E Series Power MOSFET
Vishay Siliconix
PRODUCT SUMMARY
V DS (V) at T J max.
R DS(on) max. at 25 °C ( ? )
Q g max. (nC)
Q gs (nC)
Q gd (nC)
Configuration
V GS = 10 V
650
130
15
39
Single
0.125
FEATURES
? Low Figure-of-Merit (FOM) R on x Q g
? Low Input Capacitance (C iss )
? Reduced Switching and Conduction Losses
? Ultra Low Gate Charge (Q g )
? Avalanche Energy Rated (UIS)
? Material categorization: For definitions please see
www.vishay.com/doc?99912
D
D 2 PAK
(TO-263)
APPLICATIONS
? Server and Telecom Power Supplies
?
Switch Mode Power Supplies (SMPS)
G
?
?
Power Factor Correction Power Supplies (PFC)
Lighting
- High-Intensity Discharge (HID)
G D
S
S
N-Channel MOSFET
- Fluorescent Ballast Lighting
- LED Lighting
? Industrial
- Welding
- Induction Heating
- Motor Drives
? Battery Chargers
? Renewable Energy
- Solar (PV Inverters)
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D 2 PAK (TO-263)
SiHB30N60E-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Gate-Source Voltage AC (f > 1 Hz)
SYMBOL
V DS
V GS
LIMIT
600
± 20
30
UNIT
V
Continuous Drain Current (T J = 150 °C)
V GS at 10 V
T C = 25 °C
T C = 100 °C
I D
29
18
A
Pulsed Drain Current a
I DM
65
Linear Derating Factor
2
W/°C
Single Pulse Avalanche Energy b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
E AS
P D
T J , T stg
690
250
- 55 to + 150
mJ
W
°C
Drain-Source Voltage Slope
Reverse Diode dV/dt d
Soldering Recommendations (Peak Temperature)
T J = 125 °C
for 10 s
dV/dt
37
18
300 c
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V DD = 50 V, starting T J = 25 °C, L = 28.2 mH, R g = 25 ? , I AS = 7 A.
c. 1.6 mm from case.
d. I SD ? I D , dI/dt = 100 A/μs, starting T J = 25 °C.
S12-3103-Rev. E, 24-Dec-12
1
Document Number: 91453
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIHF15N60E-E3 MOSFET N-CH 600V 15A TO220 FULLP
SIHF18N50D-E3 MOSFET N-CH 500V 18A TO-220FP
SIHF6N40D-E3 MOSFET N-CH 400V 6A TO-220 FPAK
SIHG20N50C-E3 MOSFET N-CH 500V 20A TO247
SIHG24N65E-E3 MOSFET N-CH 650V 24A TO247AC
SIHP12N60E-E3 MOSFET N-CH 600V 12A TO220AB
SIHP30N60E-E3 MOSFET N-CH 600V 29A TO220AB
SIHP5N50D-E3 MOSFET N-CH 500V 5.3A TO220AB
相关代理商/技术参数
SIHB33N60E 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:E Series Power MOSFET
SIHB33N60E-GE3 功能描述:MOSFET 600V 99mOhm@10V 33A N-Ch E-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SiHB6N65E-GE3 制造商:Vishay Intertechnologies 功能描述:MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHB8N50D-GE3 功能描述:MOSFET 500V 850mOhms@10V 8.7A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHD3N50D 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET
SIHD3N50D-E3 制造商:Vishay Semiconductors 功能描述:MOSFETS - Tape and Reel 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 500V 3A TO252 DPA 制造商:Vishay Siliconix 功能描述:MOSFET N-CH 500V 3A TO252 DPAK 制造商:Vishay Intertechnologies 功能描述:MOSFET, N-CH, 500V, 3A, TO-252AA-3, Transistor Polarity:N Channel, Continuous Dr
SiHD3N50D-GE3 功能描述:MOSFET 500V 3.2ohm@10V 3A N-Ch D-SRS RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIHD5N50D 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:D Series Power MOSFET